Product Summary

The 2N6341 is a high power NPN silicon transistors which is designed for the use in industrial power amplifiers and swithching circuit applications.

Parametrics

Absolute maximum ratings:(1)Collector to base voltage, VCBO: 180V; (2)Collector to emitter voltage, VCEO: 150V; (3)Emitter to base voltage, VEBO: 6V; (4)Collector current, at continuous condition, IC: 25 A; (5)Collector current, at peak condition, IC: 50A; (6)Base current, IB: 10A; (7)Total Power Dissipation Tc=25℃, PD: 200W; (8)Total Power Dissipation derate above 25℃, PD: 1.14W/℃; (9)operation and storage junction tempreture range, Tj, Tstg: -65 to +200℃.

Features

Features: (1)high DC current gain, Hfe=30-120 at Ic=10A=12(min) at Ic=25A; (2)low collector-emitter saturation voltage, Vce(SAT)=1.0V(MAX) at Ic=10A, Ib=1.0A; (3)complement to 2N6436-38.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2N6341G
2N6341G

ON Semiconductor

Transistors Bipolar (BJT) 25A 150V 200W NPN

Data Sheet

0-1: $7.48
1-25: $6.34
25-100: $6.05
100-500: $5.06
2N6341
2N6341

ON Semiconductor

Transistors Bipolar (BJT) 25A 150V 200W NPN

Data Sheet

Negotiable