Product Summary

The 2N6341 is a high power NPN silicon transistors which is designed for the use in industrial power amplifiers and swithching circuit applications.

Parametrics

Absolute maximum ratings:(1)Collector to base voltage, VCBO: 180V; (2)Collector to emitter voltage, VCEO: 150V; (3)Emitter to base voltage, VEBO: 6V; (4)Collector current, at continuous condition, IC: 25 A; (5)Collector current, at peak condition, IC: 50A; (6)Base current, IB: 10A; (7)Total Power Dissipation Tc=25℃, PD: 200W; (8)Total Power Dissipation derate above 25℃, PD: 1.14W/℃; (9)operation and storage junction tempreture range, Tj, Tstg: -65 to +200℃.

Features

Features: (1)high DC current gain, Hfe=30-120 at Ic=10A=12(min) at Ic=25A; (2)low collector-emitter saturation voltage, Vce(SAT)=1.0V(MAX) at Ic=10A, Ib=1.0A; (3)complement to 2N6436-38.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2N6341
2N6341

ON Semiconductor

Transistors Bipolar (BJT) 25A 150V 200W NPN

Data Sheet

Negotiable 
2N6341G
2N6341G

ON Semiconductor

Transistors Bipolar (BJT) 25A 150V 200W NPN

Data Sheet

0-1: $7.48
1-25: $6.34
25-100: $6.05
100-500: $5.06