Product Summary
The CEP61A3 is a N-channel enhancement mode field effect transistor.
Parametrics
CEP61A3 absolute maximum ratings: (1)Drain-Source Voltage VDS: 20 V; (2)Gate-Source Voltage VGS: ±12V; (3)Drain Current-Continuous ID: 57A; (4)Drain Current-Pulsed a PD: 228A; (5)Maximum Power Dissipation @ TC = 25 C IDM: 94W; (6)Derate above 25 C: 0.63W/℃.
Features
CEP61A3 features: (1)20V, 57A, RDS(ON) = 12mW @VGS = 4.5V; RDS(ON) = 20mW @VGS = 2.5V; (2)Super high dense cell design for extremely low RDS(ON); (3)High power and current handing capability; (4)TO-220 & TO-263 package; (5)Lead free product is acquired.
Diagrams
CEP6060N |
Other |
Data Sheet |
Negotiable |
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CEP6060R |
Other |
Data Sheet |
Negotiable |
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CEP60N06G |
Other |
Data Sheet |
Negotiable |
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CEP60N10 |
Other |
Data Sheet |
Negotiable |
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CEP6186 |
Other |
Data Sheet |
Negotiable |
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CEP62A2 |
Other |
Data Sheet |
Negotiable |
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