Product Summary

The 2N3635 is a silicon PNP epitaxial planar transistor designed for general purpose switching and amplifier applications. With TO-39 package, the collector-emitter voltage of th device is -140Vdc. Its collector-base voltage is -140Vdc. The collector cutoff current(VCB = – 100 Vdc, IE = 0) is –100 nAdc max.

Parametrics

Maximum ratings: (1)Collector-Emitter Voltage, VCEO: -140Vdc; (2)Collector-Base Voltage, VCBO: -140Vdc; (3)Emitter-Base Voltage, VEBO: -5.0 Vdc; (4)Collector Current, IC: -1.0 Adc; (5)Total Power Dissipation, PD:1W, 5.71 mW/°C at TA = 25°C Derate above 25°C; (6)Total Power Dissipation, PD:5W, 28.6 mW/°C at TC = 25°C Derate above 25°C; (7)Operating & Storage Junction Temperature Range, Tj, Tstg: -65 to +200 ℃.

Features

Characteristics: (1)Thermal Resistance, Junction to Ambient, RθJA: 175 °C/W; (2)Thermal Resistance, Junction to Case, RθJC: 35 °C/W; (3)Collector–Emitter Breakdown Voltage(IC = – 10 mAdc, IB = 0), V(BR)CEO: -140Vdc min; (4)Collector–Base Breakdown Voltage(IC = – 100 UAdc, IE = 0),V(BR)CBO: -140Vdc min; (5)Emitter–Base Breakdown Voltage(IE = – 10 Adc, IC = 0), V(BR)EBO: –5.0 Vdc min; (6)Collector Cutoff Current(VCB = – 100 Vdc, IE = 0), ICBO: –100 nAdc max; (7)Emitter Cutoff Current(VEB = – 3.0 Vdc, IC = 0), IEBO: –50 nAdc max.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
2N3635
2N3635
Central Semiconductor
Transistors Bipolar (BJT) PNP Ampl/Switch
Data Sheet
0-500: $2.48
500-1000: $2.30
1000-2000: $2.02
2N3635L
2N3635L
Other

Data Sheet
Negotiable