(Hong Kong)
Product Summary
The 74AHC1G04GW is a high-speed Si-gate CMOS device. The 74AHC1G04GW provides the inverting buffer.
Parametrics
74AHC1G04GW absolute maximum ratings: (1)supply voltage: -0.5 +7.0 V; (2)input voltage: -0.5 +7.0 V; (3)input diode current: -20 mA at VI < -0.5 V; (4)output diode current: ±20 mA at VO < -0.5 or VO > VCC + 0.5 V; (5)output source or sink current: ±25 mA at -0.5 V < VO < VCC + 0.5 V; (6)VCC or GND current: ±75 mA; (7)storage temperature: -65 +150 ℃; (8)power dissipation: 250 mW at Tamb = -40 to +125 ℃.
Features
74AHC1G04GW features: (1)Symmetrical output impedance; (2)High noise immunity; (3)ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V, MM EIA/JESD22-A115-A exceeds 200 V, CDM EIA/JESD22-C101 exceeds 1000 V; (4)Low power dissipation; (5)Balanced propagation delays; (6)Very small 5-pin package; (7)Specified from -40 to +85 ℃ and -40 to +125 ℃.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 74AHC1G04GW,165 |
NXP Semiconductors |
Inverters INVERTER |
Data Sheet |
Negotiable |
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74AHC1G04GW-R |
NXP Semiconductors |
Inverters INVERTER |
Data Sheet |
Negotiable |
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74AHC1G04GW,125 |
NXP Semiconductors |
Inverters INVERTER BUFFER PICOGATE |
Data Sheet |
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