(Hong Kong)
Product Summary
The AM28F010-120EC is a 1 Megabit Flash memory organized as 128 Kbytes of 8 bits each. It offers the most cost-effective and reliable read/write non-volatile random access memory. The AM28F010-120EC is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erased in-system or in standard EPROM programmers. The AM28F010-120EC is erased when shipped from the factory. The standard device offers access times as fast as 70 ns, allowing operation of high-speed microprocessors without wait states. The AM28F010-120EC is byte programmable using 10 ms programming pulses in accordance with AMD’s Flashrite programming algorithm.
Parametrics
AM28F010-120EC absolute maximum ratings: (1)Storage Temperature Plastic Packages:–65℃ to +125℃; (2)Ambient Temperature with Power Applied:–55℃ to + 125℃; (3)Voltage with Respect To Ground: All pins except A9 and VPP:–2.0V to +7.0V; (4)VCC:–2.0V to +7.0V; (5)A9:–2.0V to +14.0V; (6)VPP:–2.0V to +14.0V; (7)Output Short Circuit Current:200mA.
Features
AM28F010-120EC features: (1)High performance:70 ns maximum access time; (2)CMOS Low power consumption:30 mA maximum active current, 100μA maximum standby current, No data retention power consumption; (3)Compatible with JEDEC-standard byte-wide; (4)32-Pin EPROM pinouts: 32-pin PDIP, 32-pin PLCC, 32-pin TSOP; (5)10,000 write/erase cycles minimum; (6)Write and erase voltage 12.0 V ±5% ; (7)Latch-up protected to 100 mA from –1 V to VCC +1 V; (8)Flasherase Electrical Bulk Chip-Erase: One second typical chip-erase; (9)Flashrite Programming: 10 μs typical byte-program, Two seconds typical chip program; (10)Command register architecture for microprocessor/microcontroller compatible write interface; (11)On-chip address and data latches; (12)Advanced CMOS flash memory technology: Low cost single transistor memory cell; (13)Automatic write/erase pulse stop timer.
Diagrams
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AM28F256A-200JC |
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Am28F256A |
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AM28F256-90JC |
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