Product Summary
The DS1230Y-200 256k Nonvolatile SRAM is 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption.
Parametrics
DS1230Y-200 absolute maximum ratings: (1)Voltage on Any Pin Relative to Ground: -0.3V to +7.0V; (2)Operating Temperature: 0℃ to 70℃, -40℃ to +85℃ for IND parts; (3)Storage Temperature: -40℃ to +70℃, -40℃ to +85℃ for IND parts; (4)Soldering Temperature: 260℃ for 10 seconds.
Features
DS1230Y-200 features: (1)10 years minimum data retention in the absence of external power; (2)Data is automatically protected during power loss; (3)Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory; (4)Unlimited write cycles; (5)Low-power CMOS; (6)Read and write access times as fast as 70 ns; (7)Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time; (8)Full ±10% VCC operating range (DS1230Y); (9)Optional ±5% VCC operating range (DS1230AB); (10)Optional industrial temperature range of -40℃ to +85℃, designated IND; (11)JEDEC standard 28-pin DIP package.
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() DS1230Y-200 |
![]() Maxim Integrated Products |
![]() NVRAM 256k Nonvolatile SRAM |
![]() Data Sheet |
![]() Negotiable |
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![]() DS1230Y-200+ |
![]() Maxim Integrated Products |
![]() NVRAM 256k Nonvolatile SRAM |
![]() Data Sheet |
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![]() DS1230Y-200IND+ |
![]() Maxim Integrated Products |
![]() NVRAM 256k Nonvolatile SRAM |
![]() Data Sheet |
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![]() DS1230Y-200IND |
![]() Maxim Integrated Products |
![]() NVRAM 256k Nonvolatile SRAM |
![]() Data Sheet |
![]() Negotiable |
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