(Hong Kong)
Product Summary
The IS41C16257-60K is 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41C16257-60K ideal for use in 16- and 32-bit wide data bus systems.
Parametrics
IS41C16257-60K maximum ratings: (1)Voltage on Any Pin Relative to GND: –1.0 to +7.0 V, –0.5 t0 +4.6; (2)Supply Voltage: –1.0 to +7.0 V, –0.5 t0 +4.6; (3)Output Current: 50 mA; (4)PD Power Dissipation: 1 W; (5)Operation Temperature: 0 to 70 ℃, –40 to +85℃; (6)Storage Temperature: –55 to +125 ℃.
Features
IS41C16257-60K features: (1)Fast access and cycle time; (2)TTL compatible inputs and outputs; (3)Refresh Interval: 512 cycles/8 ms; (4)Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden; (5)JEDEC standard pinout; (6)Byte Write and Byte Read operation via two CAS; (7)Industrial temperature available.
Diagrams
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 IS41LV16100S |
Other |
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Data Sheet |
Negotiable |
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IS41LV16105C-50KLI-TR |
ISSI |
DRAM 16Mb (1M x 16) 50ns DRAM Async |
Data Sheet |
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IS41LV16256B-35TL |
ISSI |
DRAM 4M 256Kx16 35ns |
Data Sheet |
Negotiable |
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IS41LV16105B-60TL |
ISSI |
DRAM 16M 1Mx16 60ns |
Data Sheet |
Negotiable |
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IS41LV16105B-60KLI-TR |
ISSI |
DRAM 16M 1Mx16 60ns |
Data Sheet |
Negotiable |
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IS41LV16105B-60T |
ISSI |
DRAM 16M 1Mx16 60ns |
Data Sheet |
Negotiable |
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