(Hong Kong)
Product Summary
The TOSHIBA TLP521-4 consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP521-4 provides four isolated channels in a sixteen plastic DIP package.
Parametrics
Absolute maximum ratings:(1)Forward current: 50 mA;(2)Forward current derating: -0.5 (Ta≥50℃ ) mA /℃ ;(3)Pulse forward current: 1 (100μ pulse, 100pps) A;(4)Reverse voltage: 5 V;(5)Junction temperature: 125 ℃ ;(6)Collector-emitter voltage: 55 V;(7)Emitter-collector voltage: 7 V;(8)Collector current: 50 mA;(9)Collector power dissipation (1 circuit): 100 mW;(10)Collector power dissipation derating (1 circuit Ta ≥ 25℃ ): -1.0 mW /℃ ;(11)Storage temperature range: -55 to 125 ℃ ;(12)Operating temperature range: -55 to 100 ℃ ;(13)Lead soldering temperature: 260 (10 s) ℃ ;(14)Total package power dissipation: 150 mW; (15)Total package power dissipation derating (Ta ≥ 25℃ ), ΔPT /℃ :-1.5 mW /℃ ; (16) Isolation voltage, BVS 2500 (AC, 1min., R.H.≤ 60%) (Note 1) Vrms.
Features
Features:(1)Collector-emitter voltage: 55 V (min); (2)Current transfer ratio: 50% (min) Rank GB: 100% (min); (3)Isolation voltage: 2500 Vrms (min); (4)UL recognized made in Japan: UL1577, file No. E67349 and made in Thailand: UL1577, file No. E152349.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 TLP521-4 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
TLP521-4GB |
Other |
|
Data Sheet |
Negotiable |
|
||||
