Product Summary

The MG200Q2YS40 is a TOSHIBA GTR module silicon N channel IGBT. It has high power switching applications anbd motor control applications.

Parametrics

MG200Q2YS40 maximum ratings: (1)Collector-emitter voltage, VES: 1200V; (2)Gate Emitter voltage, VGES: ±20V; (3)Collector current DC, IC: 200A; (4)Collector current 1ms ICP: 400A; (5)Forward current DC, IF: 200A; (6)Forward current 1ms IFM: 400A; (7)Collector power dissipation(Tc=25℃) PC: 1300W; (8)Junction temperature Tj: 150℃; (9)Storage temperature range Tstg: -40 to 125℃; (10)Isolation voltage, VIsol: 2500(AC 1 minute)V; (11)Screw torque(Terminal/Mounting): 3/3Nm.

Features

MG200Q2YS40 features: (1)High input impedance; (2)High speed; (3)Low saturation voltage; (4)Enhancement mode; (5)Includes a complete half bridge in one package; (6)The electrodes are isolated from case.

Diagrams

MG200Q2YS40 block diagram

MG200Q2YS60A
MG200Q2YS60A

IGBT MOD CMPCT DUAL 1200V 200A
Data Sheet
Negotiable 
MG2029-121Y
MG2029-121Y
Bourns
EMI Filter Beads, Chokes & Arrays 120ohms 300mA Impedance@100MHz
Data Sheet
0-1: $0.04
1-50: $0.04
50-100: $0.03
100-500: $0.02
MG2029-100Y
MG2029-100Y
Bourns
EMI Filter Beads, Chokes & Arrays 10ohms Impedance@100MHz
Data Sheet
0-1: $0.04
1-50: $0.04
50-100: $0.03
100-500: $0.02
MG200Q2YS65H
MG200Q2YS65H
Other

Data Sheet
Negotiable 
MG200J6ES61
MG200J6ES61

IGBT MOD CMPCT 600V 200A
Data Sheet
0-1: $147.34
MG200J6ES60
MG200J6ES60
Other

Data Sheet
Negotiable