(Hong Kong)
Product Summary
The CEP60N10 is a N-channel enhancement mode field effect transistor.
Parametrics
CEP60N10 absolute maximum ratings: (1)Drain-Source Voltage VDS: 100V; (2)Gate-Source Voltage VGS: ±20V; (3)Drain Current-Continuous ID: 60 V; (4)Drain Current-Pulsed PD IDM: 240 A; (5)Maximum Power Dissipation @ TC = 25 C PD: 200A; (6)Derate above 25 C PD:1.3W/℃; (7)Single Pulsed Avalanche Energy EAS: 148mJ; (8)Single Pulsed Avalanche Current IAS: 46A; (9)Operating and Store Temperature Range TJ,Tstg: -55 to 175℃.
Features
CEP60N10 features: (1)100V, 60A, RDS(ON) = 23.5mW @VGS = 10V; (2)Super high dense cell design for extremely low RDS(ON); (3)High power and current handing capability; (4)TO-220 & TO-263 package; (5)Lead free product is acquired.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 CEP60N10 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
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CEP6060N |
Other |
|
Data Sheet |
Negotiable |
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CEP6060R |
Other |
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Data Sheet |
Negotiable |
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CEP60N06G |
Other |
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Data Sheet |
Negotiable |
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CEP60N10 |
Other |
|
Data Sheet |
Negotiable |
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CEP6186 |
Other |
|
Data Sheet |
Negotiable |
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CEP62A2 |
Other |
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Data Sheet |
Negotiable |
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