Product Summary

The IP2022/PQ80-120U is a HEXFET power MOSFET, which is also a kind of international rectifier. The IP2022/PQ80-120U utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IP2022/PQ80-120U well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.

Parametrics

IRF7306TRPBF maximum ratings: (1)Power Dissipation: 2.0 W; (2)Linear Derating Factor: 0.016 W/℃; (3)Gate-to-Source Voltage: ±20 V; (4)Peak Diode Recovery dv/dt; -5.0 V/ns; (5)TSTG Junction and Storage Temperature Range: -55 to + 150℃; (6)Pulsed Drain Current: -14A.

Features

IRF7306TRPBF features: (1)Generation V Technology; (2)Ultra Low On-Resistance; (3)Dual P-Channel Mosfet; (4)Surface Mount; (5)Available in Tape and Reel; (6)Dynamic dv/dt Rating; (7)Fast Switching.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF7306TRPBF
IRF7306TRPBF
International Rectifier
MOSFET MOSFT DUAL PCh -30V 3.6A
Data Sheet
0-1: $0.76
1-25: $0.46
25-100: $0.32
100-250: $0.30
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF710
IRF710
Vishay/Siliconix
MOSFET N-Chan 400V 2.0 Amp
Data Sheet
0-730: $0.79
730-1000: $0.76
1000-2000: $0.74
2000-5000: $0.73
IRF710, SiHF710
IRF710, SiHF710
Other

Data Sheet
Negotiable 
IRF710_R4943
IRF710_R4943
Fairchild Semiconductor
MOSFET TO-220AB
Data Sheet
Negotiable 
IRF7101
IRF7101
International Rectifier
MOSFET N-CH 20V 3.5A 8-SOIC
Data Sheet
1-570: $0.45
IRF7101PBF
IRF7101PBF
International Rectifier
MOSFET
Data Sheet
0-1: $0.68
1-25: $0.40
25-100: $0.24
100-250: $0.23
IRF7101TR
IRF7101TR
International Rectifier
MOSFET N-CH 20V 3.5A 8-SOIC
Data Sheet
1-4000: $0.41