Product Summary
The NJM4559D is a dual high-gain operational amplifier. It is internally compensated and constructed on a single silicon chip using an advanced epitaxial process.The NJM4559D is especially weel suited for applications in differential-in, differential-out as well as in potentiometric amplifiers and where gain and phase matchaed channels are mandatory. Combining the features of the NJM741 with the close parameter matching and tracking of a dual device on a monolithic chip results in unique performance characteristics.
Parametrics
NJM4559D absolute maximum ratings: (1)supply voltage:±18V; (2)differential input voltage:±30V; (3)input voltage:±15V; (4)power dissipation:500mW; (5)operating temperature range:-20℃ to +75℃; (6)storage temperature range:-40℃ to +125℃.
Features
NJM4559D electrical characteristics: (1)input offset voltage:0.5mV to 6mV; (2)input offset current:5nA to 200nA; (3)input bias current:50nA to 500nA; (4)input resistance:0.3mΩ to 5mΩ; (5)large signal voltage gain:86dB to 100dB; (6)maximum output voltage swing1:±12V to ±14V; (7)maximum output voltage swing2:±10V to ±13V; (8)input common mode votage range:±12V to ±14V; (9)common mode rejection ratio:70dB to 90dB; (10)supply voltage rejection ratio:76.5dB to 90dB; (11)supply current:3.5mA to 5.7mA; (12)equivalent input noise voltage:1.4μVrms.
Diagrams
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![]() NJM4559D |
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