(Hong Kong)
Product Summary
The SD1732 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class A operation in UHF and Band IV, V television transmitters and transposers.
Parametrics
SD1732 absolute maximum ratings: (1)Collector-Base Voltage:45 V; (2)Collector-Emitter Voltage:25 V; (3)Emitter-Base Voltage:4.0 V; (4)Device Current:2 x 2.6 A; (5)Power Dissipation:65 W; (6)Junction Temperature:+200℃; (7)Storage Temperature:-65℃ to +150℃.
Features
SD1732 features: (1)470 to 860 MHz; (2)25 Volts; (3)class a push pull; (4)designed for high power linear operation; (5)high saturated power capability; (6)gold metallization; (7)diffused emitter ballast resistors; (8)common emitter configuration; (9)internal input matching; (10)POUT = 14.0 W min. with 8.5 dB gain.
Diagrams
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 SD1732 |
STMicroelectronics |
Transistors RF Bipolar Power NPN 25V 470-860MHz |
Data Sheet |
Negotiable |
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SD1700C |
Other |
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Negotiable |
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SD1700C..K |
Other |
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Data Sheet |
Negotiable |
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SD1700K |
Other |
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Data Sheet |
Negotiable |
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SD172-11-21-221 |
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PHOTODIODE RED 4.7X3.2MM TO-5 |
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SD172-11-31-221 |
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PHOTODIODE RED 4.7X3.2MM TO-5 |
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SD172-14-21-021 |
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PHOTODIODE RED HP TO-5 |
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