(Hong Kong)
Product Summary
The UPA1458H is a NPN silicon epitaxial Darlington Power Transistor Array built in Surge Absorber and 4 circuits. It is designed for driving solenoid, relay, lamp and so on.
Parametrics
UPA1458H absolute maximum ratings: (1)Collector to Base Voltage: 60 ±10 V; (2)Collector to Emitter Voltage: 60 ±10 V; (3)Emitter to Base Voltage: 7 V; (4)Surge Sustaining Energy: 25 mJ/unit; (5)Collector Current (DC): ±5 A/unit; (6)Collector Current (pulse): ±10 A/unit; (7)Collector Current: 5 mA/unit; (8)Base Current (DC): 0.5 A/unit; (9)Total Power Dissipation: 3.5 W; (10)Total Power Dissipation: 28 W; (11)Junction Temperature: 150 ℃; (12)Storage Temperature: –55 to +150 ℃.
Features
UPA1458H features: (1)Surge Absorber (C - B) built in; (2)Easy mount by 0.1 inch of terminal interval; (3)High hFE for Darlington Transistor.
Diagrams
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Data Sheet |
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Data Sheet |
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UPA1457H |
Other |
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Data Sheet |
Negotiable |
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UPA1501 |
Other |
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Data Sheet |
Negotiable |
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UPA1522 |
Other |
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Data Sheet |
Negotiable |
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UPA1524 |
Other |
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Data Sheet |
Negotiable |
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