(Hong Kong)
Product Summary
The BLF368 is a Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range. The BLF368 is encapsulated in a 4-lead SOT262A1 balanced flange package, with two ceramic caps. The mounting flange provides the common source connection for the transistors.
Parametrics
BLF368 absolute maximum ratings: (1)drain-source voltage:65V; (2)gate-source voltage:±20V; (3)drain current (DC):25A; (4)total power dissipation Tmb≤25℃ total device; both sections equally loaded:500W; (5)storage temperature:-65℃ to 150℃; (6)junction temperature:200℃.
Features
BLF368 features: (1)High power gain; (2)Easy power control; (3)Good thermal stability; (4)Gold metallization ensures excellent reliability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
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 BLF368 |
NXP Semiconductors |
Transistors RF MOSFET Power BULK TNS-RFUH |
Data Sheet |
Negotiable |
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BLF368,112 |
NXP Semiconductors |
Transistors RF MOSFET Power BULK TNS-RFUH |
Data Sheet |
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