Product Summary
The FS75R12KS4 is an IGBT-Module.
Parametrics
FS75R12KS4 absolute maximum ratings: (1)collector-emitter voltage: 1200 V at Tvj=25℃; (2)DC-collector current: 75 A at Tc=70, 100 A at Tc=25℃; (3)repetitive peak collector current: 150 A at tP=1 ms, Tc=70℃; (4)total power dissipation: 500 W; (5)gate-emitter peak voltage: +/-20 V.
Features
FS75R12KS4 characteristic values: (1)collector-emitter saturation voltage: 3.85 V at Ic=75 A, VGE=15 V, Tvj=125℃; (2)gate threshold voltage: 4.5 to 6.5 V; (3)gate charge: 0.80 μC at VGE= -15 to +15V; (4)internal gate resistor: 5.0 Ω at Tvj=25℃; (5)input capacitance: 5.10 nF at f=1 MHz, Tvj=25, VCE=25 V, VGE=0 V; (6)reverse transfer capacitance: 0.32 nF at f=1 MHz, Tvj=25℃, VCE=25 V, VGE=0 V; (7)collector-emitter cut-off current: 5.0 mA max at VCE=1200 V, VGE=0 V, Tvj=25℃.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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FS75R12KS4 |
Infineon Technologies |
IGBT Modules 1200V 75A 3-PHASE |
Data Sheet |
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