(Hong Kong)
Product Summary
MRF317 is a broadband RF power transistor NPN silicon.
Parametrics
MRF317 maximum ratings: (1)Collector–Emitter Voltage VCEO: 35 Vdc; (2)Collector–Base Voltage VCBO: 65 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Collector Current — Continuous IC: 12 Adc; (5)Collector Current — Peak (10 seconds): 18 Adc; (6)Total Device Dissipation @ TC = 25℃ (1) Derate above 25℃; (7)PD: 270 Watts; (8)Storage Temperature Range Tstg –65 to +150 ℃.
Features
MRF317 features: (1)Built-in Matching Network for Broadband Operation; (2)100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR; (3)Gold Metallization System for High Reliability; (4)High Output Saturation Power-Ideally Suited for 30 W Carrier/120 W Peak AM Amplifier Service; (5)Guaranteed Performance in Broadband Test Fixture.
Diagrams
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 MRF317 |
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