(Hong Kong)
Product Summary
The NDT453N is a Power SOT N-Channel enhancement mode power field effect transistor. The device is produced using proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. The NDT453N is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Parametrics
NDT453N absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 30 V; (2)VGSS, Gate-Source Voltage: ±20 V; (3)ID, Drain Current - Continuous (Note 1a) ±8 A; Pulsed: ±15A; (4)PD, Maximum Power Dissipation: 3 W; (5)TJ,TSTG, Operating and Storage Temperature Range: -65 to 150℃; (6)RθJA, Thermal Resistance, Junction-to-Ambient: 42℃/W; (7)RθJC, Thermal Resistance, Junction-to-Case: 12℃/W.
Features
NDT453N features: (1)8A, 30V. RDS(ON) = 0.028W @ VGS = 10V RDS(ON) = 0.042W @ VGS = 4.5V; (2)High density cell design for extremely low RDS(ON); (3)High power and current handling capability in a widely used surface mount package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 NDT453N |
Fairchild Semiconductor |
MOSFET 30V N-Channel FET Enhancement Mode |
Data Sheet |
Negotiable |
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NDT453N_J23Z |
Fairchild Semiconductor |
MOSFET 30V N-Channel FET Enhancement Mode |
Data Sheet |
Negotiable |
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