STW45NM60

N-CHANNEL, 600V, 0.09ohm, 45A, TO-247, MDmesTM Power MOSFET, Low gate input resistance

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Price:: US $2.00~3.00 / piece [Get Latest Price]

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PartNumber:: STW45NM60

Brand:: STMicroelectronics - ST | Pack: TO | D/C: 05+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-07-15

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Part Number:STW45NM60
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Product Summary

The STW45NM60 is a new revolutionary Power MOSFET technology that associates the multiple drain process with the Company’s PowerMESH horizontal layout. The STW45NM60 has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competitor’s products. The application of it is switching application.

Parametrics

STW45NM60 absolute maximum ratings: (1)Gate- source voltage:±30 V; (2)Drain current (continuous) at TC = 25℃:45 A; (3)Drain current (continuous) at TC = 100℃:28 A; (4)Drain current (pulsed):180 A; (5)Total dissipation at TC = 25℃:417 W; (6)Derating factor:3.33 W/℃; (7)Peak diode recovery voltage slope:15 V/ns; (8)Storage temperature:–65℃ to 150℃; (9)Max. operating junction temperature:150℃.

Features

STW45NM60 features: (1)High dv/dt and avalanche capabilities; (2)100% avalanche tested; (3)Low input capacitance and gate charge; (4)Low gate input resistance; (5)Tight process control and high manufacturing yields.