Product Summary

The mg100j6es52 is a TOSHIBA GTR module N channel IGBT. It has high power switching applications and motor control applications.

Parametrics

mg100j6es52 maximum ratings: (1)Collector emitter voltage VCES: 600V; (2)Gate emitter voltage VGES: ±20V; (3)Collector current DC, IC: 100A; (4)Collector current 1ms, ICP: 200A; (5)Forward current DC, IF: 100A; (6)Forward current 1ms IFM: 200A; (7)Collector power dissipation, PC: 450W; (8)Junction temperature Tj: 150℃; (9)Storage temperature range Tstg: -40 to 125℃.

Features

mg100j6es52 features: (1)The electctrodes are isolated from case; (2)High input impedance; (3)6 IGBTa build into 1 package; (4)Enhancement mode; (5)High speed; (6)Low saturation voltage.

Diagrams

mg100j6es52 switching time test circuit and timing chert

MG1000E
MG1000E

Other


Data Sheet

Negotiable 
MG1001
MG1001

Other


Data Sheet

Negotiable 
MG1001E
MG1001E

Other


Data Sheet

Negotiable 
MG1002E
MG1002E

Other


Data Sheet

Negotiable 
MG1004
MG1004

Other


Data Sheet

Negotiable 
MG1004E
MG1004E

Other


Data Sheet

Negotiable