Product Summary
CEU61A3 is a N-channel enhancement mode field effect transistor.
Parametrics
CEU61A3 absolute maximum ratings: (1)Drain-Source Voltage VDS: 20V; (2)Gate-Source Voltage VGS: ±12V; (3)Drain℃urrent-Continuous ID: 45W; (4)Drain℃urrent-Pulsed a PD: 140A; (5)Maximum Power Dissipation @ TC = 25℃ IDM: 48W ; (6)Derate above 25℃: 0.38 W/℃; (7)Operating and Store Temperature Range TJ,Tstg: -55 to 150℃.
Features
CEU61A3 features: (1)20V, 45A, RDS(ON) = 14mW @VGS = 4.5V; RDS(ON) = 24mW @VGS = 2.5V; (2)Super high dense cell design for extremely low RDS(ON); (3)High power and current handing capability; (4)Lead free product is acquired; (5)TO-251 & TO-252 package.
Diagrams
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CEU6060R |
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CEU630N |
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CEU6336 |
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CEU6355 |
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CEU63A3 |
Other |
Data Sheet |
Negotiable |
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